Flexible and Transparent MoS₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

Lee G-H, Yu Y-J, Cui X, Petrone N, Lee C-H, Choi MS, Lee D-Y, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Flexible and Transparent MoS₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures [Internet]. ACS Nano 2013;7(9):7931–7936.