Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
Publication information:
Lee GH, Yu YJ, Cui X, Petrone N, Lee CH, Choi MS, Lee DY, Lee C, Yoo WJ, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures.
ACS Nano. American Chemical Society (ACS); 2013;7(9):7931–7936.