Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
Publication information:
Lee GH, Cui X, Kim YD, Arefe G, Zhang X, Lee CH, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
ACS Nano. American Chemical Society (ACS); 2015;9(7):7019–7026.