Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
Publication information:
Meric I, Dean CR, Petrone N, Wang L, Hone J, Kim P, Shepard KL. Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics.
Proceedings of the IEEE. Institute of Electrical and Electronics Engineers (IEEE); 2013;101(7):1609–1619.